Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

Blog Article

The wafer-level integration of high aspect Bulbs ratio silicon nanostructures is an essential part of the fabrication of nanodevices.Metal-assisted chemical etching (MACE) is a promising low-cost and high-volume technique for the generation of vertically aligned silicon nanowires.Noble metal nanoparticles were used to locally etch the silicon substrate.This work demonstrates a bottom-up self-assembly approach for noble metal nanoparticle formation and the subsequent silicon wet etching.The macroscopic wafer patterning has been done by using a poly(methyl methacrylate) masking layer.

Different metals (Au, Pt, Pd, Cu, and Ir) were investigated to derive a set of technologies as platform for specific applications.Especially, the shape of the 3D structures and the resulting reflectance have been investigated.The Si nanostructures fabricated using Au nanoparticles show a perfect light absorption with a reflectance below 0.3%.The demonstrated technology can be integrated into Biscuit Baking Tray common fabrication processes for microelectromechanical systems.