WAFER-LEVEL INTEGRATION OF SELF-ALIGNED HIGH ASPECT RATIO SILICON 3D STRUCTURES USING THE MACE METHOD WITH AU, PD, PT, CU, AND IR

Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir

The wafer-level integration of high aspect Bulbs ratio silicon nanostructures is an essential part of the fabrication of nanodevices.Metal-assisted chemical etching (MACE) is a promising low-cost and high-volume technique for the generation of vertically aligned silicon nanowires.Noble metal nanoparticles were used to locally etch the silicon subst

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